Ernesto Joselevich - Video Lecture

Ernesto Joselevich - Video Lecture

IVS-IPSTA 2020 Online Conference December 13, 2020

Plenary Lecture

Kinetics and mechanism of guided nanowire growth

Ernesto Joselevich

Weizmann Institute of Science, Rehovot Israel


The large-scale assembly of NWs with controlled orientation on surfaces remains one challenge toward their integration into practical devices. During the last decade, we have reported the growth of perfectly aligned, millimeter-long, horizontal NWs of GaN, ZnO, ZnSe, ZnTe, CdSe, CdS, CsPbBr3 and other materials, with controlled crystallographic orientations on different planes of sapphire, SiC, quartz, and spinel. The growth directions and crystallographic orientation of the NWs are controlled by their epitaxial relationship with the substrate, as well as by a graphoepitaxial effect that guides their growth along surface steps and grooves. We demonstrated the massively parallel “selfintegration” of NWs into circuits via guided growth and the production of optoelectronic nanosystems, including photodetectors, photodiodes and photovoltaic cells. Here, I will briefly present and overview of the topic, and the focus on our systematic studies aimed at understanding the mechanism of guided nanowire growth based on both in situ and ex situ kinetic studies.